Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography

Optics Express
Kyeong-Jae ByeonHeon Lee

Abstract

SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven.

References

Jun 15, 2006·Nano Letters·Frédéric S DianaPierre M Petroff
Jul 27, 2011·Optics Express·Xiao-Hui HuangHuai-Bing Wang

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Citations

Apr 17, 2014·The Journal of Physical Chemistry Letters·Siu-Fung LeungZhiyong Fan
Jan 1, 2021·Optics Express·Vin-Cent Su, Chia-Chun Gao
Jul 17, 2021·Scientific Reports·Meng-Hsin ChenHoang Yan Lin

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