Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin

ACS Applied Materials & Interfaces
Mrunal A KhaderbadV Ramgopal Rao

Abstract

We report a unipolar operation in reduced graphene oxide (RGO) field-effect transistors (FETs) via modification of the source/drain (S/D) electrode interfaces with self-assembled monolayers (SAMs) of 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)TTPOH) molecules. The dipolar Zn(II)TTPOH molecules at the RGO/platinum (Pt) S/D interface results in an increase of the electron injection barrier and a reduction of the hole-injection barrier. Using dipole measurements from Kelvin probe force microscopy and highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) calculations from cyclic voltammetry, the electron and hole injection barriers were calculated to be 2.2 and 0.11 eV, respectively, indicating a higher barrier for electrons, compared to that of holes. A reduced gate modulation in the electron accumulation regime in RGO devices with SAM shows that unipolar RGO FETs can be attained using a low-cost, solution-processable fabrication technique.

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Citations

Jul 15, 2015·Journal of Inclusion Phenomena and Macrocyclic Chemistry·Beata Girek, Wanda Sliwa
May 29, 2013·Journal of the American Chemical Society·Dong Wook ChangJong-Beom Baek
Jan 2, 2014·ACS Applied Materials & Interfaces·R Devi ChandraNripan Mathews

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