PMID: 22587278May 17, 2012Paper

Field-induced negative differential spin lifetime in silicon

Physical Review Letters
Jing LiIan Appelbaum

Abstract

We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.

References

Feb 21, 2006·Physical Review Letters·Yunong QiMichael E Flatté
May 18, 2007·Nature·Ian AppelbaumDouwe J Monsma
Nov 13, 2007·Physical Review Letters·Biqin HuangIan Appelbaum
Mar 2, 2010·Nature Nanotechnology·Behtash Behin-AeinSupriyo Datta
Apr 7, 2010·Physical Review Letters·J L ChengJ Fabian
Oct 11, 2011·Physical Review Letters·Pengke Li, Hanan Dery

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Citations

Oct 9, 2012·Nature Nanotechnology·Hanan Dery
Feb 4, 2014·Physical Review Letters·Pengke LiIan Appelbaum
Jul 31, 2013·Physical Review Letters·Yang Song, Hanan Dery
Nov 2, 2014·Physical Review Letters·Yang SongHanan Dery

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