Fine structure of metal-insulator transition in EuO resolved by doping engineering

Nanotechnology
Dmitry V AveryanovVyacheslav G Storchak

Abstract

Metal-insulator transitions (MITs) offer new functionalities for nanoelectronics. However, ongoing attempts to control the resistivity by external stimuli are hindered by strong coupling of spin, charge, orbital and lattice degrees of freedom. This difficulty presents a quest for materials which exhibit MIT caused by a single degree of freedom. In the archetypal ferromagnetic semiconductor EuO, magnetic orders dominate the MIT. Here we report a new approach to take doping under control in this material on the nanoscale: formation of oxygen vacancies is strongly suppressed to exhibit the highest MIT resistivity jump and magnetoresistance among thin films. The nature of the MIT is revealed in Gd doped films. The critical doping is determined to be more than an order of magnitude lower than in all previous studies. In lightly doped films, a remarkable thermal hysteresis in resistivity is discovered. It extends over 100 K in the paramagnetic phase reaching 3 orders of magnitude. In the warming mode, the MIT is shown to be a two-step process. The resistivity patterns are consistent with an active role of magnetic polarons-formation of a narrow band and its thermal destruction. High-temperature magnetic polaron effects include large ...Continue Reading

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Citations

May 29, 2018·ACS Applied Materials & Interfaces·Dmitry V AveryanovVyacheslav G Storchak
Sep 25, 2018·ACS Applied Materials & Interfaces·Oleg E ParfenovVyacheslav G Storchak

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