First demonstration of SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect

Optics Express
Younghyun KimShinichi Takagi

Abstract

We demonstrate a strained Si<sub>0.91</sub>Ge<sub>0.09</sub>-based carrier-injection Mach-Zehnder (MZ) optical modulator using the enhanced plasma dispersion effect in strained SiGe through mass modulation for the first time. The SiGe modulator has an injection current of 1.47 mA for a phase shift of π which is lower than that for a Si modulator. Also, it is expected that the injection current can be further reduced by increasing the strain and Ge fraction, enabling operation at an injection current of less than 1 mA. As an example of the dynamic characteristics, 10 Gbps modulation with clear eye opening was obtained by the pre-emphasis method.

References

May 20, 2005·Nature·Qianfan XuMichal Lipson
Jun 11, 2008·Optics Express·Gui-Rong ZhouFranz X Käertner
Jan 22, 2007·Optics Express·Qianfan XuMichal Lipson
Dec 10, 2007·Optics Express·William M GreenYurii A Vlasov
Dec 18, 2010·Optics Express·Po DongMehdi Asghari
May 10, 2011·Nature·Ming LiuXiang Zhang
Jul 1, 2011·Optics Express·F Y GardesG T Reed
Feb 16, 2012·Nano Letters·Ming LiuXiang Zhang
Jun 21, 2012·Optics Express·Tom Baehr-JonesMichael Hochberg

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