Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

Nanoscale
Shuang GaoFeng Pan

Abstract

The search for self-rectifying resistive memories has aroused great attention due to their potential in high-density memory applications without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive switching behavior of a simple Pt/TaOx/n-Si tri-layer structure. The forming-free phenomenon is attributed to the generation of a large amount of oxygen vacancies, in a TaOx region that is in close proximity to the TaOx/n-Si interface, via out-diffusion of oxygen ions from TaOx to n-Si. A maximum rectification ratio of ∼6 × 10(2) is obtained when the Pt/TaOx/n-Si devices stay in a low resistance state, which originates from the existence of a Schottky barrier between the formed oxygen vacancy filament and the n-Si electrode. More importantly, numerical simulation reveals that the self-rectifying behavior itself can guarantee a maximum crossbar size of 212 × 212 (∼44 kbit) on the premise of 10% read margin. Moreover, satisfactory switching uniformity and retention performance are observed based on this simple tri-layer structure. All of these results demonstrate the great potential of this simple Pt/TaOx/n-Si tri-layer structure for access device-free high-density memory applications.

References

Apr 20, 2010·Nature Materials·Eike LinnRainer Waser
May 17, 2011·Nanotechnology·Ilia ValovMichael N Kozicki
Nov 11, 2011·Nanotechnology·Antonio C TorrezanR Stanley Williams
Nov 24, 2011·Nanoscale Research Letters·Xianwen SunWeifeng Zhang
Jul 14, 2012·Reports on Progress in Physics·Doo Seok JeongCheol Seong Hwang
Oct 13, 2012·Nanotechnology·Tohru TsuruokaMasakazu Aono
Feb 21, 2013·ACS Applied Materials & Interfaces·Chao ChenFeng Pan
Jul 31, 2013·Nanotechnology·Shuang GaoFeng Pan
Sep 24, 2013·Nanoscale·Yuchao Yang, Wei Lu

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Citations

Apr 12, 2017·Advanced Materials·Lingxiang HuFei Zhuge
Oct 30, 2019·Scientific Reports·Taimur AhmedOmid Kavehei
Nov 12, 2020·Physical Chemistry Chemical Physics : PCCP·Zhuolin XieRun-Wei Li
May 14, 2021·Nanotechnology·Jiacheng LiJinshi Zhao
Nov 1, 2017·ACS Applied Materials & Interfaces·Sungjun KimByung-Gook Park
Sep 14, 2017·ACS Applied Materials & Interfaces·Yiming SunFeng Pan
Sep 25, 2019·ACS Applied Materials & Interfaces·Woohyun KimCheol Seong Hwang
Feb 12, 2020·ACS Applied Materials & Interfaces·Yuting ChenCheol Seong Hwang

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