Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature.

Nature Communications
Dmitrii KhokhriakovSaroj P Dash

Abstract

Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate-tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a non-equilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-el...Continue Reading

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Citations

Aug 11, 2020·Advanced Materials·Bing ZhaoSaroj P Dash
Jan 9, 2021·Physical Review Letters·Jose H GarciaStephan Roche
Feb 16, 2021·ACS Omega·Shahid Sattar, J Andreas Larsson
May 4, 2021·Advanced Materials·Jinjun DingMingzhong Wu
Jun 5, 2021·Scientific Reports·Peng TsengWen-Jeng Hsueh
Jul 21, 2021·Nature Nanotechnology·Juan F SierraSergio O Valenzuela
Jul 30, 2021·Advanced Science·Wei TangYu-Jia Zeng
Nov 18, 2020·ACS Applied Materials & Interfaces·Braj Bhusan SinghSubhankar Bedanta

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Methods Mentioned

BETA
electron beam
scanning electron microscopy
optical microscopy
electron beam lithography

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