Germanium-catalyzed hierarchical Al(2)O(3) and SiO(2) nanowire bunch arrays

Nanoscale
Zhanjun GuZheng Wei Pan

Abstract

Germanium (Ge), a Group IV semiconductor, was recently used as an effective catalyst to grow individual, single-crystalline ZnO nanowires through a vapor-liquid-solid (VLS) process [Pan et al., Angew. Chem., Int. Ed., 2005, 44, 274-278]. Here, we show that Ge can also act as an efficient catalyst for the large-scale growth of highly aligned, closely-packed polycrystalline Al(2)O(3) and amorphous SiO(2) nanowire bunch arrays. The Ge-catalyzed Al(2)O(3) and SiO(2) nanowire growth exhibits many interesting growth behaviors including (i) multiple nanowire growth catalyzed by one micrometer-size Ge particle, (ii) branching growth and (iii) batch-by-batch growth. These growth phenomena are distinct from the conventional Au-catalyzed nanowire growth but are analogous to the recently reported Ga-catalyzed SiO(2) nanowire growth. It is anticipated that many other oxide nanowires and nanowire assemblies can be synthesized through the Ge-catalyzed VLS process. The Ge-catalyzed Al(2)O(3) and SiO(2) nanowires emit strong visible light under ultraviolet light excitation.

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Citations

Apr 27, 2011·ACS Applied Materials & Interfaces·Jonathan C ClaussenD Marshall Porterfield
May 27, 2011·ACS Nano·Noura A Al-HajajDusica Maysinger
Oct 11, 2014·Dalton Transactions : an International Journal of Inorganic Chemistry·Jitendra GangwarAvanish Kumar Srivastava
Nov 11, 2014·Mikrochimica Acta·Ajeet KaushikMadhavan Nanir
Aug 20, 2010·Nanoscale·Kostya Ken OstrikovMiran Mozetic
Nov 27, 2015·Nanoscale·Miroslav KolíbalTomáš Šikola
Nov 18, 2010·Chemical Communications : Chem Comm·Xianfeng YangJimmy C Yu
Sep 29, 2011·Nanoscale·Kostya Ken OstrikovShailesh Kumar

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