Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Nature Communications
Zhongnan XiDi Wu

Abstract

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories.

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Citations

Aug 16, 2018·Nanotechnology·Mircea DragomanDaniela Dragoman
Feb 13, 2019·Science Advances·Aaron M BurgerJonathan E Spanier
Oct 13, 2019·Scientific Reports·Georgia Andra BoniLucian Pintilie
Mar 20, 2020·Nature Communications·Chao MaXiaoguang Li
Aug 18, 2018·Physical Review Letters·Konstantin KlyukinVitaly Alexandrov
Jul 3, 2020·Scientific Reports·Norihiro OshimeHitoshi Osawa
Oct 5, 2019·Advanced Materials·Zheng Wen, Di Wu
Jan 18, 2020·Physical Review Letters·M LiEvgeny Y Tsymbal
Jan 17, 2021·Nature Communications·Xiao LongJosep Fontcuberta
Feb 20, 2021·Physical Review Letters·Jun DingEvgeny Y Tsymbal
Jan 26, 2018·ACS Applied Materials & Interfaces·Zhongnan XiZheng Wen
Dec 9, 2020·ACS Applied Materials & Interfaces·Yihao YangZheng Wen
Sep 14, 2019·Nano Letters·Qiong YangVitaly Alexandrov
Nov 18, 2021·ACS Applied Materials & Interfaces·Jialin ZhuangQi An
Nov 25, 2021·Science Advances·Yihao YangZheng Wen

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Methods Mentioned

BETA
atomic
electron diffraction
AFM

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