Hall and field-effect mobilities in few layered p-WSe₂ field-effect transistors

Scientific Reports
Nihar R PradhanLuis Balicas

Abstract

Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2 exfoliated onto SiO2. Without dielectric engineering and beyond a T-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm(2)/Vs at T = 300 K. The hole Hall mobility reaches a maximum value of 650 cm(2)/Vs as T is lowered below ~150 K, indicating that insofar WSe2-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe2 and SiO2. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe2-based FETs displaying higher room temperature mobilities, i.e. approaching those of p-doped Si, which would make it a suitable candidate for high performance opto-electronics.

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Citations

Jan 7, 2016·ACS Applied Materials & Interfaces·Gyeong Sook BangSung-Yool Choi
Nov 26, 2015·Nano Letters·Nihar R PradhanLuis Balicas
Sep 8, 2015·ACS Nano·Hema C P MovvaSanjay K Banerjee
Mar 11, 2016·Nano Letters·Mahito YamamotoKazuhito Tsukagoshi
Jul 9, 2016·Scientific Reports·Giovanni V RestaGiovanni de Micheli
Aug 3, 2016·Scientific Reports·Vighter IberiOlga S Ovchinnikova
Mar 31, 2017·Scientific Reports·Giovanni V RestaGiovanni De Micheli
Jul 6, 2017·ACS Applied Materials & Interfaces·Sukrit SucharitakulXuan P A Gao
Mar 29, 2018·Scientific Reports·Zihan YaoWenjuan Zhu
Aug 7, 2018·Chemical Society Reviews·Yuan LiuXiangfeng Duan
Jan 9, 2018·Nanoscale·Chong YinJianlu Wang
Aug 26, 2018·Scientific Reports·Nihar R PradhanLuis Balicas
Nov 16, 2018·Chemical Science·José Ramón Durán RetamalJr-Hau He
Nov 16, 2019·Nature Communications·Maheswari SivanAaron Voon-Yew Thean
Jul 21, 2016·Advanced Materials·Munkhbayar BatmunkhJoseph G Shapter
May 20, 2015·ACS Applied Materials & Interfaces·Nihar R PradhanLuis Balicas
Feb 21, 2018·Nano Letters·Chanyoung YimGeorg S Duesberg
Jun 29, 2018·Journal of the American Chemical Society·Mikayla A YoderRalph G Nuzzo
Oct 22, 2019·ACS Applied Materials & Interfaces·Jaejun LeeHeon-Jin Choi
Mar 4, 2020·ACS Applied Materials & Interfaces·Arnab K MajeeZlatan Aksamija
Dec 15, 2016·ACS Applied Materials & Interfaces·Sum-Gyun YiKyung-Hwa Yoo
Aug 10, 2018·ACS Applied Materials & Interfaces·Cheol-Joon ParkJinsoo Joo
Jan 9, 2018·ACS Applied Materials & Interfaces·Wei-Sheng LinYu-Lun Chueh
Aug 28, 2018·ACS Applied Materials & Interfaces·Nan Fang, Kosuke Nagashio
Nov 18, 2021·Nanoscale·Lene GammelgaardPeter Bøggild

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Methods Mentioned

BETA
atomic force microscopy
AFM

Software Mentioned

2DVRH

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