High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth

Advanced Materials
Guanyu ZhouChristopher L Hinkle

Abstract

The transfer-free direct growth of high-performance materials and devices can enable transformative new technologies. Here, room-temperature field-effect hole mobilities as high as 707 cm2 V-1 s-1 are reported, achieved using transfer-free, low-temperature (≤120 °C) direct growth of helical tellurium (Te) nanostructure devices on SiO2 /Si. The Te nanostructures exhibit significantly higher device performance than other low-temperature grown semiconductors, and it is demonstrated that through careful control of the growth process, high-performance Te can be grown on other technologically relevant substrates including flexible plastics like polyethylene terephthalate and graphene in addition to amorphous oxides like SiO2 /Si and HfO2 . The morphology of the Te films can be tailored by the growth temperature, and different carrier scattering mechanisms are identified for films with different morphologies. The transfer-free direct growth of high-mobility Te devices can enable major technological breakthroughs, as the low-temperature growth and fabrication is compatible with the severe thermal budget constraints of emerging applications. For example, vertical integration of novel devices atop a silicon complementary metal oxide semi...Continue Reading

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Citations

Apr 11, 2019·Macromolecular Rapid Communications·Huili Yang, Mingyu Guo
Dec 18, 2019·Nature Nanotechnology·Chunsong ZhaoAli Javey
Jun 17, 2020·Nanotechnology·Prafful GolaniSteven J Koester
Feb 6, 2021·ACS Applied Materials & Interfaces·Wei JiangJianlu Wang
Mar 25, 2021·Reports on Progress in Physics·Yangyang WangJing Lu
Dec 18, 2018·The Journal of Physical Chemistry Letters·Hongzhi ShenDehui Li
Jan 7, 2021·ACS Applied Materials & Interfaces·Yiheng YinYuzheng Guo
Feb 19, 2019·The Journal of Physical Chemistry. C, Nanomaterials and Interfaces·Prashant BhaskarLaurens D A Siebbeles
Jan 11, 2022·ACS Applied Materials & Interfaces·Hongwei XuJae Kyeong Jeong

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