High on-off ratio improvement of ZnO-based forming-free memristor by surface hydrogen annealing

ACS Applied Materials & Interfaces
Yihui SunYue Zhang

Abstract

In this work, a high-performance, forming-free memristor based on Au/ZnO nanorods/AZO (Al-doped ZnO conductive glass) sandwich structure has been developed by rapid hydrogen annealing treatment. The Ron/Roff rate is dramatically increased from ∼10 to ∼10(4) after the surface treatment. Such an enhanced performance is attributed to the introduced oxygen vacancies layer at the top of ZnO nanorods. The device also exhibits excellent switching and retention stability. In addition, the carrier migration behavior can be well interpreted by classical trap-controlled space charge limited conduction, which verifies the forming of conductive filamentary in low resistive state. On this basis, Arrhenius activation theory is adopted to explain the drifting of oxygen vacancies, which is further confirmed by the time pertinence of resistive switching behavior under different sweep speed. This fabrication approach offers a useful approach to enhance the switching properties for next-generation memory applications.

References

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Citations

Apr 29, 2016·Langmuir : the ACS Journal of Surfaces and Colloids·Rajeh MundleAswini K Pradhan
Aug 20, 2016·Nanoscale Research Letters·Firman Mangasa SimanjuntakTseung-Yuen Tseng
Apr 30, 2017·ACS Applied Materials & Interfaces·Jun Ge, Mohamed Chaker
Feb 3, 2018·Scientific Reports·Benjamin Kerr Barnes, Kausik S Das
Nov 15, 2019·The Analyst·Yang BuLevent Yobas
Aug 31, 2017·Scientific Reports·Yi-Jen Huang, Si-Chen Lee
Sep 6, 2020·Nanoscale Research Letters·Hsiang-Chun WangXinke Liu
Sep 14, 2017·ACS Applied Materials & Interfaces·Yiming SunFeng Pan
Nov 22, 2017·ACS Applied Materials & Interfaces·Yihui SunYue Zhang

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