Hysteresis in single-layer MoS2 field effect transistors

ACS Nano
Dattatray J LateC N R Rao

Abstract

Field effect transistors using ultrathin molybdenum disulfide (MoS(2)) have recently been experimentally demonstrated, which show promising potential for advanced electronics. However, large variations like hysteresis, presumably due to extrinsic/environmental effects, are often observed in MoS(2) devices measured under ambient environment. Here, we report the origin of their hysteretic and transient behaviors and suggest that hysteresis of MoS(2) field effect transistors is largely due to absorption of moisture on the surface and intensified by high photosensitivity of MoS(2). Uniform encapsulation of MoS(2) transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.

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Citations

Dec 25, 2013·ACS Applied Materials & Interfaces·Thripuranthaka M, Dattatray J Late
May 30, 2013·ACS Nano·Dattatray J LateC N R Rao
Oct 24, 2013·ACS Nano·Yichao WangKourosh Kalantar-Zadeh
Nov 8, 2012·Nature Nanotechnology·Qing Hua WangMichael S Strano
Jun 12, 2013·Nature Nanotechnology·Oriol Lopez-SanchezAndras Kis
Oct 22, 2013·Nature Nanotechnology·Kallol RoyArindam Ghosh
Feb 5, 2016·Physical Chemistry Chemical Physics : PCCP·Fei ZouKailun Yao
Jan 13, 2016·Chemistry : a European Journal·Edman Shik Chi TsangXinlin Hong
Feb 4, 2016·Nano Letters·Matěj VelickýRobert A W Dryfe
Nov 26, 2015·Angewandte Chemie·Yuanyue LiuSu-Huai Wei
Nov 17, 2015·Advanced Materials·Eunpa KimCostas P Grigoropoulos
Dec 17, 2014·ACS Nano·Enze ZhangFaxian Xiu
Mar 3, 2015·ACS Applied Materials & Interfaces·Dattatray J Late
Jan 28, 2015·ACS Nano·Qing ZhangShuit-Tong Lee
Mar 21, 2013·ACS Nano·Simone BertolazziAndras Kis
Nov 22, 2013·Scientific Reports·Chandra Sekhar RoutDattatray J Late
Jan 22, 2015·Scientific Reports·Youwei ZhangZhi-Jun Qiu

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