III-V heterostructure tunnel field-effect transistor

Journal of Physics. Condensed Matter : an Institute of Physics Journal
C ConvertinoK E Moselund

Abstract

The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state switches to overcome the power dissipation challenge in ultra-low power integrated circuits. TFETs take advantage of quantum mechanical tunneling hence exploit a different current control mechanism compared to standard MOSFETs. In this review, we describe state-of-the-art development of TFET both in terms of performances and of materials integration and we identify the main remaining technological challenges such as heterojunction defects and oxide/channel interface traps causing trap-assisted-tunneling (TAT). Mesa-structures, planar as well as vertical geometries are examined. Conductance slope analysis on InAs/GaSb nanowire tunnel diodes are reported, these two-terminal measurements can be relevant to investigate the tunneling behavior. A special focus is dedicated to III-V heterostructure TFET, as different groups have recently shown encouraging results achieving the predicted sub-thermionic low-voltage operation.

References

Dec 17, 2004·Physical Review Letters·J AppenzellerPh Avouris
Aug 26, 2010·Nano Letters·B Mattias BorgClaes Thelander
Aug 31, 2011·Nano Letters·Cedric D BessireHeike Riel
Nov 19, 2011·Nature·Adrian M Ionescu, Heike Riel
Mar 15, 2012·ACS Nano·Bahram GanjipourClaes Thelander
Jan 28, 2017·Scientific Reports·Michiru NishitaYasuhiro Minami
Feb 23, 2017·ACS Nano·Mattias BorgHeike Riel
Dec 20, 2017·Nature Nanotechnology·Mengwei SiPeide D Ye

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