InAs1-xPx nanowires for device engineering

Nano Letters
A I PerssonL Samuelson

Abstract

We present the growth of homogeneous InAs(1-x)P(x) nanowires as well as InAs(1-x)P(x) heterostructure segments in InAs nanowires with P concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter of the wires. The crystal structure of the InAs as well as the InAs(1-x)P(x) segments were found to be wurtzite as determined from high-resolution transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual heterostructured wires to extract the conduction band offset of InAs(1-x)P(x) relative to InAs as a function of composition. From these measurements we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2 eV. Finally, homogeneous InAs(0.8)P(0.2) nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at room temperature.

References

Jul 21, 2006·The Journal of Physical Chemistry. B·Yongqi LiangDongsheng Xu

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Citations

Jul 27, 2011·Nano Letters·Maria E MessingChennupati Jagadish
Oct 21, 2011·Nano Letters·Zongyin YangLimin Tong
Jan 3, 2009·Nature Nanotechnology·P CaroffL Samuelson
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Feb 15, 2007·Nano Letters·Andreas FuhrerLars Samuelson

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