Influence of Semiconductor Thickness and Molecular Weight on the Charge Transport of a Naphthalenediimide-Based Copolymer in Thin-Film Transistors

ACS Applied Materials & Interfaces
Yevhen KarpovAnton Kiriy

Abstract

The N-type semiconducting polymer, P(NDI2OD-T2), with different molecular weights (MW=23, 72, and 250 kg/mol) was used for the fabrication of field-effect transistors (FETs) with different semiconductor layer thicknesses. FETs with semiconductor layer thicknesses from ∼15 to 50 nm exhibit similar electron mobilities (μ's) of 0.2-0.45 cm2 V(-1) s(-1). Reduction of the active film thickness led to decreased μ values; however, FETs with ∼2 and ∼5 nm thick P(NDI2OD-T2) films still exhibit substantial μ's of 0.01-0.02 and ∼10(-4) cm2 V(-1) s(-1), respectively. Interestingly, the lowest molecular weight sample (P-23, MW≈23 kg/mol, polydispersity index (PDI)=1.9) exhibited higher μ than the highest molecular weight sample (P-250, MW≈250 kg/mol, PDI=2.3) measured for thicker devices (15-50 nm). This is rather unusual behavior because typically charge carrier mobility increases with MW where improved grain-to-grain connectivity usually enhances transport events. We attribute this result to the high crystallinity of the lowest MW sample, as confirmed by differential scanning calorimetry and X-ray diffraction studies, which may (over)compensate for other effects.

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Citations

Jul 22, 2016·Chemical Communications : Chem Comm·Tomasz MarszalekWojciech Pisula
Apr 20, 2021·Journal of Materials Chemistry. B, Materials for Biology and Medicine·Anuja Shreeram KulkarniKun Qian
Apr 29, 2021·Angewandte Chemie·Xiaofei GuoWenping Hu
Aug 9, 2018·Journal of the American Chemical Society·Kilian HoratzFranziska Lissel

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