Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties

ACS Applied Materials & Interfaces
Zhi-Xue XuRen-Kui Zheng

Abstract

We report the fabrication of 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29PT)-based ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin dioxide (SnO2) semiconductor thin films on PMN-0.29PT single crystals. Using such FeFETs we realized in situ, reversible, and nonvolatile manipulation of the electron carrier density and achieved a large nonvolatile modulation of the resistance (∼330%) of the SnO2:Co films through the polarization switching of PMN-0.29PT at 300 K. Particularly, combining the ferroelectric gating with piezoresponse force microscopy, X-ray diffraction, Hall effect, and magnetoresistance (MR), we rigorously disclose that both sign and magnitude of the MR are intrinsically determined by the electron carrier density, which could modify the s-d exchange interaction of the SnO2:Co films. Furthermore, we realized multilevel resistance states of the SnO2:Co films by combining the ferroelectric gating with ultraviolet light illumination, demonstrating that the FeFETs have potential applications in multistate resistive memories and electro-optical devices.

References

Jan 18, 2005·Nature Materials·J M D CoeyC B Fitzgerald
Mar 19, 2014·ACS Applied Materials & Interfaces·Bowen ZhiWenbin Wu
Jul 9, 2014·IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control·Shujun ZhangThomas R Shrout
Mar 19, 2015·Scientific Reports·X L WangA Ruotolo
Nov 10, 2015·Advanced Materials·Jia-Mian HuCe-Wen Nan
Oct 16, 2016·Scientific Reports·Keshab R SapkotaWenyong Wang
Jun 20, 2017·Advanced Materials·Xuegang ChenXia Hong

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