Interface structure and composition of MoO3 /GaAs(0 0 1)

Journal of Physics. Condensed Matter : an Institute of Physics Journal
Anirban SarkarReinhold Koch

Abstract

We studied growth, structure, stress, oxidation state as well as surface and interface structure and composition of thermally-evaporated thin MoO3 films on the technologically important III/V-semiconductor substrate GaAs(0 0 1). The MoO3 films grow with Mo in the 6+  oxidation state. The electrical resistance is tunable by the oxygen partial pressure during deposition from transparent insulating to semi-transparant halfmetallic. In the investigated growth temperature range (room temperature to 200 °C) no diffraction spots are detected by x-ray diffraction. However, high resolution transmission electron microscopy reveals the formation of MoO3 nanocrystal grains with diameters of 5-8 nm. At the interface a  ≈3 nm-thick intermediate layer has formed, where the single-crystal lattice of GaAs gradually transforms to the nanocrystalline MoO3 structure. This interpretation is corroborated by our in situ and real-time stress measurements evidencing a two-stage growth process as well as by elemental interface analysis revealing coexistance of Ga, As, Mo, and oxygen in a intermediate layer of 3-4 nm.

References

Apr 17, 2002·Physical Review Letters·E ChasonS J Hearne
May 21, 2005·Physical Review Letters·R KochA K Das
Jul 21, 2010·Nanoscale·Kourosh Kalantar-zadehRichard B Kaner
Aug 13, 2011·ACS Applied Materials & Interfaces·Claudio GirottoBarry P Rand
Oct 24, 2012·Advanced Materials·Sivacarendran BalendhranKourosh Kalantar-zadeh
Jan 9, 2014·Nano Letters·Corsin BattagliaAli Javey
Nov 11, 2014·Nature Materials·Alexander A BessonovMarc J A Bailey
Dec 30, 2014·Journal of Physics. Condensed Matter : an Institute of Physics Journal·T AshrafR Koch
Apr 2, 2015·Nanotechnology·Anirban SarkarReinhold Koch
Feb 7, 2017·ACS Applied Materials & Interfaces·André L F CauduroMorten Madsen

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Citations

Apr 17, 2020·ACS Applied Materials & Interfaces·Aram YoonZonghoon Lee

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