Interfacial electronic properties of 2D/3D (PtSe2 /CsPbX3 ) perovskite heterostructure

Journal of Physics. Condensed Matter : an Institute of Physics Journal
Xiang Xiang FengJunliang Yang

Abstract

Interfacial electronic properties are greatly significant to study the photoelectric properties of semiconductor heterostructures. The novel heterostructures are constructed using perovskite 3D CsPbX3 (X = Cl, Br, I) and 2D PtSe2, and the structural and photoelectrical properties are studied by density functional theory. The band levels transform and interfacial charge transfer have serious differences at the interface of the CsPbX3-PtSe2 heterostructures. The CsPbCl3-PtSe2 and CsPbBr3-PtSe2 heterostructures show the type-I band arrangement, however, the CsPbI3-PtSe2 heterostructure demonstrate the type-II band arrangement. The difference in work function of the two semiconductors causes electrons to flow spontaneously at the interface. Moreover, the monolayer PtSe2 can broaden the absorption spectrum of the CsPbX3-PtSe2 heterostructures, that effectively enhance absorption capability of the heterostructures, especially the CsPbI3-PtSe2 heterostructure. These results demonstrate PtSe2 semiconductor materials can effectively improve the photoelectric performance of all-inorganic metal halide perovskite.

References

Nov 8, 2012·Nature Nanotechnology·Qing Hua WangMichael S Strano
Jun 7, 2014·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Xiao XiaoWeijia Wen
Nov 26, 2016·Advanced Materials·Yuda ZhaoYang Chai
Feb 22, 2018·The Journal of Physical Chemistry Letters·Zhi-Xiang ZhangYu-Cheng Wu
Apr 20, 2018·Nature Communications·Xuechao YuQi Jie Wang
Aug 10, 2018·The Journal of Physical Chemistry Letters·Biao LiuJunliang Yang
Sep 6, 2018·Journal of Physics. Condensed Matter : an Institute of Physics Journal·San-Dong Guo, Jun Dong
Sep 27, 2018·Advanced Materials·Chao FanQinglin Zhang

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Citations

Jun 23, 2021·Nanotechnology·Banglin CaoZegao Wang

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