Is keV ion-induced pattern formation on Si(001) caused by metal impurities?

Nanotechnology
Sven MackoThomas Michely

Abstract

We present ion beam erosion experiments performed in ultrahigh vacuum using a differentially pumped ion source and taking care that the ion beam hits the Si(001) sample only. Under these conditions no ion beam patterns form on Si for angles theta < or = 45 degrees with respect to the global surface normal using 2 keV Kr+ and fluences of approximately 2 x 10(22) ions m(-2). In fact, the ion beam induces a smoothening of preformed patterns. Simultaneous sputter deposition of stainless steel in this angular range creates a variety of patterns, similar to those previously ascribed to clean ion-beam-induced destabilization of the surface profile. Only for grazing incidence with 60 degrees < or = theta < or = 83 degrees do pronounced ion beam patterns form. It appears that the angular-dependent stability of Si(001) against pattern formation under clean ion beam erosion conditions is related to the angular dependence of the sputtering yield, and not primarily to a curvature-dependent yield as invoked frequently in continuum theory models.

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Citations

Jul 5, 2011·The Journal of Chemical Physics·P Süle
Feb 5, 2014·ACS Applied Materials & Interfaces·İrem TanyeliGregory De Temmerman
Oct 11, 2014·Nanoscale Research Letters·Marc TeichmannBernd Rauschenbach
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Jan 22, 2013·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Satoshi Numazawa, Roger Smith
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Sep 5, 2017·Polymers·Lan Thi PhanMyoung-Woon Moon
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Jan 15, 2016·Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics·Daniel A PearsonPatrick D Shipman
Oct 22, 2010·Materials·Adrian Keller, Stefan Facsko

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