Large positive linear magnetoresistance in the two-dimensional t 2g electron gas at the EuO/SrTiO3 interface

Scientific Reports
Kristy J KormondyAlexander A Demkov

Abstract

The development of novel nano-oxide spintronic devices would benefit greatly from interfacing with emergent phenomena at oxide interfaces. In this paper, we integrate highly spin-split ferromagnetic semiconductor EuO onto perovskite SrTiO3 (001). A careful deposition of Eu metal by molecular beam epitaxy results in EuO growth via oxygen out-diffusion from SrTiO3. This in turn leaves behind a highly conductive interfacial layer through generation of oxygen vacancies. Below the Curie temperature of 70 K of EuO, this spin-polarized two-dimensional t 2g electron gas at the EuO/SrTiO3 interface displays very large positive linear magnetoresistance (MR). Soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) reveals the t 2g nature of the carriers. First principles calculations strongly suggest that Zeeman splitting, caused by proximity magnetism and oxygen vacancies in SrTiO3, is responsible for the MR. This system offers an as-yet-unexplored route to pursue proximity-induced effects in the oxide two-dimensional t 2g electron gas.

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Citations

Sep 1, 2020·Ultramicroscopy·Sirong Lu, David J Smith
Feb 6, 2020·The Journal of Physical Chemistry Letters·Thomas VincentSergio Vlaic
Mar 13, 2020·The Journal of Physical Chemistry Letters·Lixia RenKexin Jin

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Methods Mentioned

BETA
x-ray
transmission electron microscopy
x-ray diffraction
scanning
x-ray photoelectron
quartz crystal microbalance

Software Mentioned

Vienna Ab - Initio Simulation Package code

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