Layer-Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultraflat Metals

ACS Applied Materials & Interfaces
Hao LeeA K M Newaz

Abstract

Layered materials based on transition-metal dichalcogenides (TMDs) are promising for a wide range of electronic and optoelectronic devices. Realizing such practical applications often requires metal-TMD connections or contacts. Hence, a complete understanding of electronic band alignments and potential barrier heights governing the transport through metal-TMD junctions is critical. However, it is presently unclear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few-layered (1 to 5 layers) MoS2 immobilized on ultraflat conducting Au surfaces [root-mean-square (rms) surface roughness < 0.2 nm] and indium-tin oxide (ITO) substrates (rms surface roughness < 0.7 nm) forming a vertical metal (CAFM tip)-semiconductor-metal device. We have observed that the current increases with the number of layers up to five layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed how this barrier decreases as the number of layers increases. Using density functional theory calculations, we successfully demonstrated that ...Continue Reading

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Citations

Aug 10, 2020·Nature Communications·Lok-Wing WongThuc Hue Ly
Jun 25, 2021·ACS Applied Materials & Interfaces·Salvatore Ethan PanasciFilippo Giannazzo
Jul 27, 2021·Langmuir : the ACS Journal of Surfaces and Colloids·Timothy E KiddAndrew James Stollenwerk
Dec 18, 2020·ACS Applied Materials & Interfaces·Hongzhi ShenDehui Li
Sep 10, 2020·ACS Nano·Kirstin SchaubleEric Pop

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