Low-cost, large-scale, and facile production of Si nanowires exhibiting enhanced third-order optical nonlinearity

ACS Applied Materials & Interfaces
Zhipeng HuangChi Zhang

Abstract

A facile method for the low-cost and large-scale production of silicon nanowires has been developed. Silicon powders were subjected to sequential metal plating and metal-assisted chemical etching, resulting in well-defined silicon nanowires. The morphology and structure of the silicon nanowires were investigated, revealing that single-crystal silicon nanowires with average diameters of 79 ± 35 nm and length more than 10 μm can be fabricated. The silicon nanowires show excellent third-order nonlinear optical properties, with a third-order susceptibility much larger than that of bulk silicon, porous silicon, and silicon nanocrystals embedded in SiO(2).

References

Mar 10, 2005·Nano Letters·Allon I HochbaumPeidong Yang
Jul 26, 2008·Nature Nanotechnology·Candace K ChanYi Cui
Oct 1, 1985·Optics Letters·E W Van StrylandM J Soileau
Sep 23, 2010·Advanced Materials·Zhipeng HuangUlrich Gösele
Oct 12, 2010·Advanced Materials·Kui-Qing Peng, Shuit-Tong Lee
Jan 1, 2010·Journal of Materials Chemistry·Yongquan QuXiangfeng Duan

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