Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper.

Nature Communications
Silvia ContiGianluca Fiori

Abstract

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a "channel array" approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 × 103 (up to 5 × 104) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

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Citations

May 7, 2021·Scientific Reports·Dennis D WellerMehdi B Tahoori
May 6, 2021·Sensors·Filippo CostaGiuliano Manara
Jun 15, 2021·Materials Advances·Jon AzpeitiaAndres Castellanos-Gomez
Sep 7, 2021·The Journal of Physical Chemistry. C, Nanomaterials and Interfaces·Michele MagnozziMaurizio Canepa
Nov 7, 2021·Advanced Science·Peihua YangHong Jin Fan

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Methods Mentioned

BETA
atomic force microscopy

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