Monolithic metal oxide transistors

ACS Nano
Yongsuk ChoiJeong Ho Cho

Abstract

We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, tog...Continue Reading

References

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Citations

May 27, 2016·ACS Applied Materials & Interfaces·Jae Hoon ParkJeong Ho Cho
Dec 30, 2016·ACS Applied Materials & Interfaces·Jae Hoon ParkJeong Ho Cho
Feb 25, 2020·Chemistry : a European Journal·Jeong-Wan JoSung Kyu Park
Feb 11, 2021·ACS Applied Materials & Interfaces·Eun Goo LeeYoun Sang Kim
Sep 10, 2020·ACS Applied Materials & Interfaces·Jingu KangSung Kyu Park
Feb 23, 2018·ACS Applied Materials & Interfaces·Jaemok KooMoon Sung Kang
Aug 19, 2017·ACS Applied Materials & Interfaces·Hyungseok KangJeong Ho Cho
Aug 29, 2019·ACS Applied Materials & Interfaces·Seongchan KimJeong Ho Cho

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