PMID: 15245250Jul 13, 2004Paper

Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors

Physical Review Letters
Joerg AppenzellerPh Avouris

Abstract

We present a detailed study on the impact of multimode transport in carbon nanotube field-effect transistors. Under certain field conditions electrical characteristics of tube devices are a result of the contributions of more than one one-dimensional subband. Through potassium doping of the nanotube the impact of the different bands is made visible. We discuss the importance of scattering for a stepwise change of current as a function of gate voltage and explain the implications of our observations for the performance of nanotube transistors.

References

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Sep 13, 2002·Physical Review Letters·J AppenzellerPh Avouris
Sep 13, 2002·Physical Review Letters·S HeinzePh Avouris
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Citations

Aug 31, 2010·Nanoscale Research Letters·Zhuangzhi LiJudy Wu
Jul 26, 2008·Nature Nanotechnology·Phaedon AvourisVasili Perebeinos
Jul 21, 2006·Proceedings of the National Academy of Sciences of the United States of America·Xuefeng GuoColin Nuckolls
Aug 21, 2012·Nanoscale Research Letters·Michael Loong Peng TanGehan Amaratunga Aj
Feb 2, 2008·Science·David K Ferry
May 8, 2007·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Stephan RocheRiichiro Saito
Jun 10, 2009·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Shih-Jye Sun
Feb 9, 2005·Physical Review Letters·M J BiercukC M Marcus
Dec 31, 2008·Physical Review Letters·Albert LiaoEric Pop
May 1, 2021·Molecules : a Journal of Synthetic Chemistry and Natural Product Chemistry·Dong-Hwan ChoiJu-Jin Kim
Mar 8, 2013·Nano Letters·Ali RazaviehJoerg Appenzeller
Oct 14, 2010·Chemical Reviews·Liangbing HuGeorge Grüner
Oct 4, 2012·Nano Letters·Ramon B SalazarJoerg Appenzeller

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