Nano-scale depth-varying recrystallization of oblique Ar+ sputtered Si(111) layers.

Scientific Reports
Divya GuptaSanjeev Aggarwal

Abstract

Silicon, the workhorse of semiconductor industry, is being exploited for various functional applications in numerous fields of nanotechnology. In this paper, we report the fabrication of depth controllable amorphous silicon (a-Si) layers under 80 keV Ar+ ion sputtering at off-normal ion incidences of 30°, 40° and 50° and crystallization of these amorphous Si(111) layers under thermal annealing. We find that the irradiated samples were not fully amorphized even for the lowest oblique incidence of 30°. Sputtering at off-normal incidences induces depth controllable surface amorphization in Si(111). Annealing at temperature of 1,073 K is characterized by formation of depth-varying buried amorphous layer due to defect recrystallization and damage recovery. Some remnant tensile stress has been observed for recrystallized samples even for lowest oblique incidence. The correlation of amorphization and stress due to sputtering induced by oblique incidence has been discussed systematically. The possible mechanism of recrystallization is discussed in terms of vacancies produced in sputtering dominated regime and their migration during annealing treatment. Our results reveal that with appropriate selection of oblique ion beam sputtering pa...Continue Reading

Citations

Apr 21, 2021·Dalton Transactions : an International Journal of Inorganic Chemistry·Ghada El JamalMats Jonsson

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