Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

Scientific Reports
Muxi YuRu Huang

Abstract

A novel vertical 3D RRAM structure with greatly improved reliability behavior is proposed and experimentally demonstrated through basically compatible process featuring self-localized switching region by sidewall electrode oxidation. Compared with the conventional structure, due to the effective confinement of the switching region, the newly-proposed structure shows about two orders higher endurance (>10(8) without verification operation) and better retention (>180h@150 °C), as well as high uniformity. Corresponding model is put forward, on the base of which thorough theoretical analysis and calculations are conducted as well, demonstrating that, resulting from the physically-isolated switching from neighboring cells, the proposed structure exhibits dramatically improved reliability due to effective suppression of thermal effects and oxygen vacancies diffusion interference, indicating that this novel structure is very promising for future high density 3D RRAM application.

References

Nov 11, 2011·Nanotechnology·Antonio C TorrezanR Stanley Williams
Dec 28, 2012·Nature Nanotechnology·J Joshua YangDuncan R Stewart
Oct 4, 2014·Nanoscale Research Letters·Jagan Singh MeenaTseung-Yuen Tseng
Jan 20, 2015·Scientific Reports·Kyung Min KimCheol Seong Hwang
Sep 9, 2015·Scientific Reports·Yue BaiHe Qian
Sep 15, 2015·Scientific Reports·Min Kyu YangHan-Cheol Ryu
Sep 26, 2015·Nature Communications·Seunghyun LeeH-S Philip Wong

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Citations

Jan 13, 2018·Nanoscale Research Letters·Debashis PandaTseung Yuen Tseng
Aug 31, 2017·Scientific Reports·Yi-Jen Huang, Si-Chen Lee
Apr 13, 2021·Journal of Advanced Research·M E FoudaA M Eltawil

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Methods Mentioned

BETA
electron spectroscopy
x-ray spectroscopy

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