Numerical simulation of ISFET structures for biosensing devices with TCAD tools

Biomedical Engineering Online
Daniele PasseriAndrea Scorzoni

Abstract

Ion Sensitive Field Effect Transistors (ISFETs) are one of the primitive structures for the fabrication of biosensors (BioFETs). Aiming at the optimization of the design and fabrication processes of BioFETs, the correlation between technological parameters and device electrical response can be obtained by means of an electrical device-level simulation. In this work we present a numerical simulation approach to the study of ISFET structures for bio-sensing devices (BioFET) using Synopsys Sentaurus Technology Computer-Aided Design (TCAD) tools. The properties of a custom-defined material were modified in order to reproduce the electrolyte behavior. In particular, the parameters of an intrinsic semiconductor material have been set in order to reproduce an electrolyte solution. The electrostatic behaviour (transfer characteristics) of a general BioFET structure has been simulated when the captured target number increases from 1 to 10. The ID current as a function of the VDS voltage for different positions of a single charged block and for different values of the reference electrode have been calculated. We presented a numerical simulation approach to the study of Ion-Sensitive Field Effect Transistor (ISFET) structures for biosensi...Continue Reading

Citations

Sep 4, 2015·Biomedical Engineering Online·Franscisco M OrtuñoIgnacio Rojas
Oct 28, 2016·Physical Chemistry Chemical Physics : PCCP·B M LoweN G Green

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Methods Mentioned

BETA
biosensors
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biosensing
biosensor

Software Mentioned

Sentaurus
Synopsys Sentaurus
Sentaurus TCAD
TCAD

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