On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

ACS Applied Materials & Interfaces
Maureen K PettersonAndrew G Rinzler

Abstract

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separated there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm(2) AM1.5G illumination, results in a short-circuit current density of 35 mA/cm(2) and associated power conversion efficiency of 15%. The...Continue Reading

References

Aug 31, 2004·Science·Zhuangchun WuAndrew G Rinzler
Jul 5, 2007·Nano Letters·Jinquan WeiDehai Wu
May 24, 2011·Nano Letters·Pooja WadhwaAndrew G Rinzler
Nov 1, 2011·Journal of the American Chemical Society·Xiaojuan ShenShuit-Tong Lee
Jul 18, 2012·Nano Letters·William ReganAlex Zettl
Nov 28, 2012·Scientific Reports·Enzheng ShiAnyuan Cao

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