PMID: 9535650Apr 29, 1998Paper

Optical studies of individual InAs quantum dots in GaAs: few-particle effects

Science
L LandinL Samuelson

Abstract

Optical emission from individual strained indium arsenide (InAs) islands buried in gallium arsenide (GaAs) was studied. At low excitation power density, the spectra from these quantum dots consist of a single line. At higher excitation power density, additional emission lines appeared at both higher and lower energies, separated from the main line by about 1 millielectron volt. At even higher excitation power density, this set of lines was replaced by a broad emission peaking below the original line. The splittings were an order of magnitude smaller than the lowest single-electron or single-hole excited state energies, indicating that the fine structure results from few-particle interactions in the dot. Calculations of few-particle effects give splittings of the observed magnitude.

References

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Citations

Mar 1, 2012·The Journal of Chemical Physics·Heather M JaegerOleg V Prezhdo
Jun 1, 2007·Nanoscale Research Letters·Weibo CaiXiaoyuan Chen
May 23, 2015·Scientific Reports·D ManteiA Zrenner
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Aug 14, 2020·ACS Applied Materials & Interfaces·Vijay Kumar BaliyanJang-Kun Song
Mar 3, 2006·The Journal of Physical Chemistry. B·Jun-Nan Nian, Hsisheng Teng

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