Optically controlled magnetic-field etching on the nano-scale

Light, Science & Applications
Takashi YatsuiDaniel Bloch

Abstract

Electric and magnetic fields play an important role in both chemical and physical reactions. However, since the coupling efficiency between magnetic fields and electrons is low in comparison with that between electric fields and electrons in the visible wavelength region, the magnetic field is negligible in photo-induced reactions. Here, we performed photo-etching of ZrO2 nano-stripe structures, and identified an etching-property polarisation dependence. Specifically, the etching rate and etched profiles depend on the structure width. To evaluate this polarisation-dependent etching, we performed numerical calculations using a finite-difference time-domain method. Remarkably, the numerical results revealed that the polarisation-dependent etching properties were determined by the magnetic field distributions, rather than the electric field distributions. As nano-scale structures induce a localised magnetic field, the discovery of this etching dependence on the magnetic field is expected to introduce a new perspective on advanced nano-scale structure fabrication.

References

Nov 13, 2003·Physical Review Letters·K MatsudaT Takagahara
Jan 11, 2005·The Journal of Chemical Physics·Tadashi KawazoeMotoichi Ohtsu
Apr 23, 2005·Science·Nicholas FangXiang Zhang
Nov 26, 1993·Science·E Betzig, R J Chichester
Mar 20, 2010·Science·Tolga ErginMartin Wegener
Jun 21, 2011·Optics Letters·Tianhua FengJensen Li
Jul 31, 2013·Physical Review Letters·Sven M Hein, Harald Giessen
Nov 28, 2013·Scientific Reports·Nabila TanjeemTakashi Yatsui
Dec 25, 2013·Beilstein Journal of Nanotechnology·Takashi YatsuiMotoichi Ohtsu

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Citations

Nov 9, 2017·Beilstein Journal of Nanotechnology·Takashi YatsuiKatsuyuki Nobusada
Apr 26, 2017·Optics Express·Kosuke ShibataDaniel Bloch

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Methods Mentioned

BETA
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