Photo-patternable ion gel-gated graphene transistors and inverters on plastic

Nanotechnology
Seoung-Ki LeeJong-Hyun Ahn

Abstract

We demonstrate photo-patternable ion gel-gated graphene transistors and inverters on plastic substrates. The photo-patternable ion gel can be used as a negative photoresist for the patterning of underlying graphene as well as gate dielectrics. As a result, an extra graphene-patterning step is not required, which simplifies the device fabrication and avoids a side effect arising from the photoresist residue. The high capacitance of ion gel gate dielectrics yielded a low voltage operation (~2 V) of the graphene transistor and inverter. The graphene transistors on plastic showed an on/off-current ratio of ~11.5, along with hole and electron mobilities of 852 ± 124 and 452 ± 98 cm(2) V(-1) s(-1), respectively. In addition, the flexible graphene inverter was successfully fabricated on plastic through the potential superposition effect from the drain bias. These devices show excellent mechanical flexibility and fatigue stability.

References

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Citations

Feb 13, 2014·Journal of the American Chemical Society·Hong Chul MoonC Daniel Frisbie
Aug 29, 2014·BioMed Research International·Manzoor Ahmad GatooSwaleha Zubair
Sep 1, 2015·Advanced Materials·Beom Joon KimJeong Ho Cho
Sep 4, 2015·Advanced Materials·Baoqing NieTingrui Pan
Feb 11, 2015·ACS Applied Materials & Interfaces·Daeil KimJeong Sook Ha
Apr 8, 2015·Nanoscale·Moo Hyung LeeMoon Sung Kang
Jun 29, 2016·ACS Nano·Xinlu LiJames M Tour
Jan 30, 2014·Nanotechnology·Anna Demming
Nov 6, 2018·Scientific Reports·Ye ZhangRajesh Rajamani
Jan 6, 2016·Advanced Materials·Houk JangJong-Hyun Ahn
Aug 18, 2017·Chemical Reviews·Dustin Chen, Qibing Pei
Nov 21, 2019·ACS Applied Materials & Interfaces·Myungwoo SonMoon-Ho Ham

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