Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns

ACS Applied Materials & Interfaces
Gang NiuThomas Schroeder

Abstract

Dislocation networks are one of the most principle sources deteriorating the performances of devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a technique enabling fully coherent germanium (Ge) islands selectively grown on nanotip-patterned Si(001) substrates. The silicon (Si)-tip-patterned substrate, fabricated by complementary metal oxide semiconductor compatible nanotechnology, features ∼50-nm-wide Si areas emerging from a SiO2 matrix and arranged in an ordered lattice. Molecular beam epitaxy growths result in Ge nanoislands with high selectivity and having homogeneous shape and size. The ∼850 °C growth temperature required for ensuring selective growth has been shown to lead to the formation of Ge islands of high crystalline quality without extensive Si intermixing (with 91 atom % Ge). Nanotip-patterned wafers result in geometric, kinetic-diffusion-barrier intermixing hindrance, confining the major intermixing to the pedestal region of Ge islands, where kinetic diffusion barriers are, however, high. Theoretical calculations suggest that the thin Si/Ge layer at the interface plays, nevertheless, a significant role in realizing our fully coherent Ge nanoislands free from extended defects especia...Continue Reading

References

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Citations

Sep 20, 2016·ACS Applied Materials & Interfaces·Gang NiuThomas Schroeder
Apr 1, 2017·ACS Applied Materials & Interfaces·Fan YangBuwen Cheng
Jul 27, 2018·Nanotechnology·Viktoria SchlykowGiovanni Capellini
Aug 2, 2020·Scientific Reports·Bilge BekdüzGerd Bacher

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