Position detection and observation of a conducting filament hidden under a top electrode in a Ta₂O₅-based atomic switch

Nanotechnology
Alpana NayakMasakazu Aono

Abstract

Resistive random access memories (ReRAMs) are promising next-generation memory devices. Observation of the conductive filaments formed in ReRAMs is essential in understanding their operating mechanisms and their expected ultimate performance. Finding the position of the conductive filament is the key process in the preparation of samples for cross-sectional transmission electron microscopy (TEM) imaging. Here, we propose a method for locating the position of conductive filaments hidden under top electrodes. Atomic force microscopy imaging with a conductive tip detects the current flowing through a conductive filament from the bottom electrode, which reaches its maximum at a position that is above the conductive filament. This is achieved by properly biasing a top electrode, a bottom electrode and the conductive tip. This technique was applied to Cu/Ta2O5/Pt atomic switches, revealing the formation of a single Cu filament in a device, although the device had a large area of 5 × 5 μm(2). Change in filament size was clearly observed depending on the compliance current used in the set process. It was also found from the TEM observation that the cross-sectional shape of the formed filament varies considerably, which is attributable ...Continue Reading

References

Nov 2, 2007·Nature Materials·Rainer Waser, Masakazu Aono
Jul 26, 2008·Nature Nanotechnology·J Joshua YangR Stanley Williams
Jan 19, 2010·Nature Nanotechnology·Deok-Hwang KwonCheol Seong Hwang
Nov 27, 2010·Nanoscale·Min Hwan Lee, Cheol Seong Hwang
Mar 15, 2012·Nature Communications·Yuchao YangWei Lu
Jul 14, 2012·Reports on Progress in Physics·Doo Seok JeongCheol Seong Hwang
Oct 13, 2012·Nanotechnology·Tohru TsuruokaMasakazu Aono

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