Resistive memories based on Rose Bengal and related xanthene derivatives: insights from modeling charge transport properties

Physical Chemistry Chemical Physics : PCCP
Daniele FazziFabrizia Negri

Abstract

We present a computational study on the electrical bistability behavior of four xanthene derivatives based on sodium fluorescein. Intra- and intermolecular charge transfer parameters are computed and employed to rationalize the efficiencies experimentally determined for resistive memory devices based on these organic materials. Charge injection at the electrode/organic interface in the presence of pristine and reduced molecular species is estimated by comparing the electron affinities of xanthene derivatives with the work function of commonly employed electrodes, and bulk charge transport is modeled assuming a charge hopping regime. It is shown that the OFF state is injection limited and that the efficiency of the bistability phenomenon is governed by sizeable intramolecular reorganization energies associated with electron transfer. The computed results reveal that the combined role of electron attractor groups and conformational degrees of freedom contributes to a more favorable level alignment at the interface and to the desired increase of the intramolecular reorganization energies. These optimal conditions are fulfilled for Rose Bengal. It is expected that the interrelated role of molecular parameters, conformational degree...Continue Reading

References

Jul 23, 2004·The Journal of Chemical Physics·M MalagoliJ L Brédas
Mar 24, 2007·Chemical Reviews·Veaceslav CoropceanuJean-Luc Brédas
Aug 22, 2008·Journal of the American Chemical Society·Joseph E Norton, Jean-Luc Brédas
Oct 1, 2008·Physical Chemistry Chemical Physics : PCCP·David L Cheung, Alessandro Troisi
Jan 29, 2009·Journal of the American Chemical Society·M Carmen Ruiz DelgadoJean-Luc Brédas
Apr 21, 2009·Journal of the American Chemical Society·Simone Di MottaChiara Castiglioni

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