Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy

ACS Applied Materials & Interfaces
Anup L DadlaniJan Torgersen

Abstract

Zn(O,S) buffer layer electronic configuration is determined by its composition and thickness, tunable through atomic layer deposition. The Zn K and L-edges in the X-ray absorption near edge structure verify ionicity and covalency changes with S content. A high intensity shoulder in the Zn K-edge indicates strong Zn 4s hybridized states and a preferred c-axis orientation. 2-3 nm thick films with low S content show a subdued shoulder showing less contribution from Zn 4s hybridization. A lower energy shift with film thickness suggests a decreasing bandgap. Further, ZnSO4 forms at substrate interfaces, which may be detrimental for device performance.

References

Mar 25, 2016·The Journal of Physical Chemistry Letters·Jan TorgersenFritz B Prinz
May 26, 2016·ACS Applied Materials & Interfaces·Anup L DadlaniJan Torgersen

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