Reversible resistive switching behaviour in CVD grown, large area MoOx

Nanoscale
Fahmida RahmanSivacarendran Balendhran

Abstract

Non-volatile resistive memory devices are theorized to be the most promising pathway towards analog memory and neuromorphic computing. Two-dimensional MoO3 is a versatile planar transition metal oxide, whose properties can be readily tuned, making it anywhere from a wide bandgap semiconductor to a semi-metal. Successful integration of such a planar metal oxide into resistive memory can enable adaptive and low power memory applications. Here, we investigate the non-volatile and reversible resistive switching behaviour of oxygen deficient MoOx in a cross-point metal/insulator/metal (MIM) architecture. Layered MoOx films are synthesised using chemical vapour deposition (CVD) and reveal excellent resistive switching performance with relatively low electroforming and operating voltages. Switching ratios of ∼103 and stable data retention of >104 s are achieved. As such, this work demonstrates the viability of MoOx as a resistive memory element and paves the way for future two-dimensional resistive memory technologies.

References

May 9, 2009·Nanotechnology·J Joshua YangR Stanley Williams
May 17, 2011·Nanotechnology·Qiangfei XiaR Stanley Williams
Oct 24, 2012·Advanced Materials·Sivacarendran BalendhranKourosh Kalantar-zadeh
Aug 13, 2013·Scientific Reports·Jing QiJianlin Liu
Nov 11, 2014·Nature Materials·Alexander A BessonovMarc J A Bailey
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Citations

Mar 24, 2020·ACS Applied Materials & Interfaces·Aram ArashSivacarendran Balendhran
Aug 26, 2021·ACS Applied Materials & Interfaces·Leilei YangXuchun Gui
Jan 25, 2020·ACS Applied Materials & Interfaces·Md Ataur RahmanMadhu Bhaskaran
Oct 9, 2019·ACS Applied Materials & Interfaces·Fahmida RahmanSivacarendran Balendhran
Nov 6, 2021·Advanced Materials·Ting WangXiaodong Chen

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Methods Mentioned

BETA
X-ray
AFM
transmission electron microscopy
energy
imaging technique

Software Mentioned

ImageJ

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