Robust Direct Bandgap Characteristics of One- and Two-Dimensional ReS2

Scientific Reports
Zhi Gen YuYong-Wei Zhang

Abstract

Two-dimensional (2D) transition-metal dichalcogenides (TMDs), most notably, MoS2 and WS2, have attracted significant attention due to their sizable and direct bandgap characteristics. Although several interesting MoS2 and WS2-based optoelectronic devices have been reported, their processability and reproducibility are limited since their electrical properties are strongly dependent of the number of layers, strain and sample sizes. It is highly desirable to have a robust direct bandgap TMD, which is insensitive to those factors. In this work, using density functional theory, we explore the effects of layer number, strain and ribbon width on the electronic properties of ReS2, a new member in the TMD family. The calculation results reveal that for monolayer ReS2, the nature (direct versus indirect) and magnitude of its bandgap are insensitive to strain. Importantly, the predicted bandgap and also charge carrier mobilities are nearly independent of the number of layers. In addition, the direct bandgap of ReS2 nanoribbons is only weakly dependent on their width. These robust characteristics strongly suggest that ReS2 has great potential for applications in optoelectronic nanodevices.

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Citations

Apr 26, 2017·ACS Applied Materials & Interfaces·Jing-Kai QinLiang Zhen
Jul 19, 2017·ACS Applied Materials & Interfaces·Jae Young ParkSeong Chan Jun
Jan 10, 2018·Advanced Materials·Jani HämäläinenMarkku Leskelä
Dec 5, 2018·Light, Science & Applications·Krishna P DhakalJong-Hyun Ahn
Mar 27, 2018·Advanced Materials·Anton AutereZhipei Sun
Nov 27, 2020·Nanotechnology·Junfu LiDaqiang Gao
Apr 18, 2017·Nano Letters·Ashish AroraRudolf Bratschitsch
Mar 7, 2019·ACS Nano·Chunhua AnJing Liu
Aug 19, 2017·Nano Letters·Amber McCrearyAngela R Hight Walker

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Software Mentioned

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