Room-temperature electrically pumped InGaN-based microdisk laser grown on Si

Optics Express
Meixin FengHui Yang

Abstract

Silicon photonics has been longing for an efficient on-chip light source that is electrically driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes can emit directional lasing beam through a closely coupled on-chip waveguide efficiently, and hence is particularly suitable for photonics integration. The realization of electrically pumped III-nitride microdisk laser grown on Si has been impeded by the conventional undercut structure, poor material quality, and a limited quality of GaN microdisk formed by dry etching. Here we report a successful fabrication of room-temperature electrically pumped InGaN-based microdisk lasers grown on Si. A dramatic narrowing of the electroluminescence spectral line-width and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing. This is the first observation of electrically pumped lasing in InGaN-based microdisk lasers grown on Si at room temperature.

References

Aug 15, 2003·Nature·Kerry J Vahala
Oct 11, 2012·Nature Communications·Yoon-Ho KimHong-Gyu Park
Jul 30, 2016·Science·Pei MiaoLiang Feng
Jan 27, 2017·Light, Science & Applications·Yang MeiHao-Chung Kuo

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