Scanning microwave microscopy applied to semiconducting GaAs structures

The Review of Scientific Instruments
Arne BuchterFerry Kienberger

Abstract

A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

References

Jul 4, 2015·Nature Communications·Eric Yue MaZhi-Xun Shen
Jul 3, 2016·The Review of Scientific Instruments·Yong-Tao CuiZhi-Xun Shen

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Citations

Nov 30, 2019·The Review of Scientific Instruments·Matvey FinkelTeun M Klapwijk
Mar 3, 2021·The Review of Scientific Instruments·T Le QuangM Zeier

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