Self-Heating Effects In Polysilicon Source Gated Transistors

Scientific Reports
R A SporeaS R P Silva

Abstract

Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may lead to undesirable thermal runaway effects and even device failure through self-heating. Using numerical simulations we show that, even in highly thermally-confined scenarios and at high current levels, self-heating is insufficient to compromise device integrity. Performance is minimally affected through a modest increase in output conductance, which may limit the maximum attainable gain. Measurements on polysilicon devices confirm the simulated results, with even smaller penalties in performance, largely due to improved heat dissipation through metal contacts. We conclude that SGTs can be reliably used for high gain, power efficient analog and digital circuits without significant performance impact due to self-heating. This further demonstrates the robustness of SGTs.

References

Aug 19, 2005·Proceedings of the National Academy of Sciences of the United States of America·Takao SomeyaTakayasu Sakurai
Nov 3, 2011·Langmuir : the ACS Journal of Surfaces and Colloids·Nanliu LiuYong Cao
May 11, 2012·Advanced Materials·E FortunatoR Martins
Sep 29, 2012·Science·Suk-Won HwangJohn A Rogers
Jul 28, 2013·Nature·Martin KaltenbrunnerTakao Someya
Sep 7, 2013·ACS Nano·Davood ShahrjerdiWilfried Haensch
Dec 11, 2014·Scientific Reports·Kris MynyPaul Heremans

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