Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon

Nano Letters
A K BuinM P Anantram

Abstract

Utilizing sp3d5s* tight-binding band structure and wave functions for electrons and holes we show that acoustic phonon limited hole mobility in [110] grown silicon nanowires (SiNWs) is greater than electron mobility. The room temperature acoustically limited hole mobility for the SiNWs considered can be as high as 2500 cm2/V s, which is nearly three times larger than the bulk acoustically limited silicon hole mobility. It is also shown that the electron and hole mobility for [110] grown SiNWs exceed those of similar diameter [100] SiNWs, with nearly 2 orders of magnitude difference for hole mobility. Since small diameter SiNWs have been seen to grow primarily along the [110] direction, results strongly suggest that these SiNWs may be useful in future electronics. Our results are also relevant to recent experiments measuring SiNW mobility.

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Citations

Jun 15, 2012·Nano Letters·Yann-Michel NiquetChristophe Krzeminski
Jun 19, 2012·Scientific Reports·Daryoush ShiriM P Anantram
Dec 20, 2014·ACS Applied Materials & Interfaces·Sang Hoon LeeJae Min Myoung
Feb 12, 2014·Langmuir : the ACS Journal of Surfaces and Colloids·Dayong TengChanghui Ye
Jan 10, 2013·Journal of the American Chemical Society·Hamid Mehdipour, Kostya Ken Ostrikov
Sep 23, 2010·Advanced Materials·Zhipeng HuangUlrich Gösele
Sep 24, 2014·Journal of Physics. Condensed Matter : an Institute of Physics Journal·S Noor Mohammad
Feb 3, 2015·Nanotechnology·Qingwei ZhouJunming Liu
Oct 17, 2014·Optics Express·Gwangseok YangJihyun Kim
Jan 23, 2018·Physical Chemistry Chemical Physics : PCCP·Yan He, Gang Ouyang
Feb 20, 2009·Nano Letters·Floris A ZwanenburgLeo P Kouwenhoven
Jan 15, 2010·Chemical Reviews·V SchmidtU Gösele
Apr 16, 2009·Nano Letters·Martin P PerssonStephan Roche
Mar 19, 2019·Chemical Reviews·Renkun ChenDeyu Li

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