Silicene nanomesh

Scientific Reports
Feng PanJing Lu

Abstract

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.

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Citations

Jan 7, 2016·Scientific Reports·Tian-Tian JiaYoshiyuki Kawazoe
Feb 11, 2016·Scientific Reports·Tian-Tian JiaGang Chen
Oct 25, 2016·Reports on Progress in Physics·Suman Chowdhury, Debnarayan Jana
Dec 17, 2016·Nanotechnology·Fan GaoYi Shi
Aug 20, 2018·Journal of Molecular Modeling·Gurleen Kaur Walia, Deep Kamal Kaur Randhawa
Oct 24, 2020·The Journal of Chemical Physics·Hsin-Yi LiuJhao-Ying Wu

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Software Mentioned

Atomistix Tool Kit ( ATK )
Dmol
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