Simulations of operation dynamics of different type GaN particle sensors

Sensors
Eugenijus GaubasJuozas Vysniauskas

Abstract

The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar drift regimes have been analyzed by using dynamic models based on the Shockley-Ramo theorem. The carrier multiplication processes determined by impact ionization have been considered in order to compensate carrier lifetime reduction due to introduction of radiation defects into GaN detector material.

References

Sep 17, 2013·Sensors·Eugenijus GaubasVidas Kalesinskas

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Citations

Jun 11, 2015·Sensors·Eugenijus GaubasNikolai Kazuchits
Apr 18, 2016·Materials·Eugenijus GaubasIgnas Reklaitis

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Software Mentioned

TCAD
Synopsys TCAD Sentaurus

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