Space charge layer effects in silicon studied by in situ surface transport

Journal of Physics. Condensed Matter : an Institute of Physics Journal
Frederik EdlerChristoph Tegenkamp

Abstract

Electronic properties of low dimensional structures on surfaces can be comprehensively explored by surface transport experiments. However, the surface sensitivity of this technique to atomic structures comes along with the control of bulk related electron paths and internal interfaces. Here we analyzed the role of Schottky-barriers and space charge layers for Si-surfaces. By means of a metal submonolayer coverage deposited on vicinal Si(1 1 1), we reliably accessed subsurface transport channels via angle- and temperature-dependent in situ transport measurements. In particular, high temperature treatments performed under ultra high vacuum conditions led to the formation of surface-near bulk defects, e.g. SiC-interstitials. Obviously, these defects act as p-type dopants and easily overcompensate lightly n-doped Si substrates.

References

Jun 6, 2003·Physical Review Letters·J N CrainF J Himpsel
Feb 5, 2005·Science·J N Crain, D T Pierce
Dec 13, 2006·Physical Review Letters·J W WellsPh Hofmann
Jan 7, 2009·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Ph Hofmann, J W Wells
May 20, 2015·Journal of Physics. Condensed Matter : an Institute of Physics Journal·I MiccoliC Tegenkamp

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Citations

Sep 20, 2019·Journal of Physics. Condensed Matter : an Institute of Physics Journal·J Michael Gottfried, Ulrich Höfer

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