Abstract
Strain engineering of semiconductors is used to modulate carrier mobility, tune the energy bandgap, and drive growth of self-assembled nanostructures. Understanding strain-energy relaxation mechanisms including phase transformations, dislocation nucleation and migration, and fracturing is essential to both exploit this degree of freedom and avoid degradation of carrier lifetime and mobility, particularly in prestrained electronic devices and flexible electronics that undergo large changes in strain during operation. Raman spectroscopy, high-resolution transmission electron microscopy, and electron diffraction are utilized to identify strain-energy release mechanisms of bent diamond-cubic silicon (Si) and zinc-blende GaAs nanowires, which were elastically strained to >6% at room temperature and then annealed at an elevated temperature to activate relaxation mechanisms. High-temperature annealing of bent Si-nanowires leads to the nucleation, glide, and climb of dislocations, which align themselves to form grain boundaries, thereby reducing the strain energy. Herein, Si nanowires are reported to undergo polygonization, which is the formation of polygonal-shaped grains separated by grain boundaries consisting of aligned edge disloc...Continue Reading
References
Apr 13, 2006·Nano Letters·Samuel HoffmannChristophe Ballif
Feb 1, 2008·Physical Review Letters·Ting ZhuKen Gall
Jul 26, 2008·Nature Nanotechnology·Jonathan E AllenLincoln J Lauhon
May 26, 2009·Nano Letters·Kun ZhengZe Zhang
Sep 28, 2010·Physical Review Letters·Mukul KabirKrystyn J Van Vliet
Jan 15, 2011·Physical Review Letters·Junyi ZhuSu-Huai Wei
Mar 15, 2011·Advanced Materials·Yan-Bo WangChennupati Jagadish
Nov 25, 2011·Nano Letters·Eric R HemesathLincoln J Lauhon
Apr 13, 2012·Nano Letters·Sheng DaiJing Zhu
Apr 13, 2012·Nano Letters·G StanR F Cook
Apr 30, 2015·Nano Letters·S Conesa-BojA Fontcuberta i Morral
May 20, 2015·Nature Materials·Lisa Y ChenDaniel S Gianola
Jul 15, 2015·Nature Nanotechnology·Guangming ChengYong Zhu
Jun 29, 2016·Nano Letters·Zhiyuan SunDavid N Seidman
Aug 20, 2016·Science Advances·Hongti ZhangYang Lu
Jun 29, 2017·Nano Letters·Zhiyuan SunLincoln J Lauhon
Oct 7, 2017·Ultramicroscopy·Zhiyuan SunDavid N Seidman
Nov 14, 2017·ACS Nano·Lihua WangXiaodong Han
Mar 4, 2018·Scientific Reports·Doron Chachamovitz, Dan Mordehai