Strain-engineering tunable electron mobility of monolayer IV-V group compounds

Nanoscale
Wei ZhangPing Zhang

Abstract

First-principles simulations demonstrate the anisotropic and high mobility in the new group monolayer IV-V semiconductors. The strain-engineered bandstructure reveals the conduction bands are sensitive to armchair-direction deformation. By applying strains, the electrical transportation in the armchair direction can be further improved or deteriorated. We use this important feature to achieve the tunable electron mobility in monolayer IV-V semiconductors. The controllable introduction of strain into semiconductors offers an important degree of flexibility in electrical transportation. Meanwhile, our works leads to a new approaches for research on mobility control in two-dimensional semiconductors. These will be useful for novel mechanical-electronic devices related to mobility switching.

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Citations

Nov 2, 2019·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Li-Bin ShiPing Qian
Feb 6, 2020·Physical Chemistry Chemical Physics : PCCP·Radha N SomaiyaSanjeev K Gupta
Sep 13, 2020·Scientific Reports·Mohammad Ali MohebpourMeysam Bagheri Tagani
Aug 31, 2019·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Mengjuan ZhangFangping Ouyang
Apr 27, 2021·Physical Chemistry Chemical Physics : PCCP·Wei ZhangShubin Yan
May 4, 2021·ACS Applied Materials & Interfaces·Ghada Dushaq, Mahmoud Rasras
Apr 22, 2021·Nanotechnology·Zuozhang WangYanhuai Ding

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