Stress-released Si3 N4 fabrication process for dispersion-engineered integrated silicon photonics

Optics Express
Kaiyi Wu, Andrew W Poon

Abstract

We develop a stress-released stoichiometric silicon nitride (Si3N4) fabrication process for dispersion-engineered integrated silicon photonics. To relax the high tensile stress of a thick Si3N4 film grown by low-pressure chemical vapor deposition (LPCVD) process, we grow the film in two steps and introduce a conventional dense stress-release pattern onto a ∼400nm-thick Si3N4 film in between the two steps. Our pattern helps minimize crack formation by releasing the stress of the film along high-symmetry periodic modulation directions and helps stop cracks from propagating. We demonstrate a nearly crack-free ∼830nm-thick Si3N4 film on a 4" silicon wafer. Our Si3N4 photonic platform enables dispersion-engineered, waveguide-coupled microring and microdisk resonators, with cavity sizes of up to a millimeter. Specifically, our 115µm-radius microring exhibits an intrinsic quality (Q)-factor of ∼2.0×106 for the TM00 mode and our 575µm-radius microdisk demonstrates an intrinsic Q of ∼4.0×106 for TM modes in 1550nm wavelengths.

References

Mar 4, 2011·Optics Express·Jared F BautersJohn E Bowers
May 12, 2012·Nature·Koo Hyun NamSeung Hwan Ko
Nov 29, 2012·Optics Express·Jiang LiKerry J Vahala
Jul 1, 2014·Optics Letters·Yoshitomo OkawachiAlexander L Gaeta
Jun 13, 2018·Nature·Baicheng YaoChee Wei Wong
Aug 11, 2018·Science·Tobias J KippenbergMichael L Gorodetsky
Oct 10, 2018·Nature·Brian SternMichal Lipson
Nov 7, 2019·Optics Express·Houssein El DiraniCorrado Sciancalepore
Dec 28, 2019·Optics Express·Zhichao YeVictor Torres-Company

❮ Previous
Next ❯

Citations


❮ Previous
Next ❯

Related Concepts

Related Feeds

Cell Imaging in CNS

Here is the latest research on cell imaging and imaging modalities, including light-sheet microscopy, in the central nervous system.