Study on Resistance Switching Properties of Na0.5Bi0.5TiO3Thin Films Using Impedance Spectroscopy.

Nanoscale Research Letters
Ting ZhangWeifeng Zhang

Abstract

The Na0.5Bi0.5TiO3(NBT) thin films sandwiched between Au electrodes and fluorine-doped tin oxide (FTO) conducting glass were deposited using a sol-gel method. Based on electrochemical workstation measurements, reproducible resistance switching characteristics and negative differential resistances were obtained at room temperature. A local impedance spectroscopy measurement of Au/NBT was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the Au/NBT/FTO device. It was proposed that the first and the second ionization of oxygen vacancies are responsible for the conduction in the low- and high-resistance states, respectively. The experimental results showed high potential for nonvolatile memory applications in NBT thin films.

References

Feb 21, 2006·Physical Review Letters·Takashi Oka, Naoto Nagaosa
Nov 2, 2007·Nature Materials·Rainer Waser, Masakazu Aono

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Citations

Mar 16, 2012·Nanoscale Research Letters·Chun-Chieh LinChu-Hsuan Lin
Jun 28, 2012·Nanoscale Research Letters·Sheikh Ziaur RahamanMing-Jinn Tsai
Dec 7, 2013·Nanoscale Research Letters·Sheikh Ziaur Rahaman, Siddheswar Maikap
Nov 27, 2010·Nanoscale·Min Hwan Lee, Cheol Seong Hwang
Sep 15, 2020·Physical Chemistry Chemical Physics : PCCP·F YangD C Sinclair

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Methods Mentioned

BETA
X-ray

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